IDW15G120C5B datasheet(4/10 Pages) INFINEON

Part #	IDW15G120C5B

Description	Revolutionary semiconductor material - Silicon Carbide

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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4 / 10 page

Final Data Sheet

4

Rev. 2.0, 2014-06-10

5

th Generation thinQ!™ 1200 V SiC Schottky Diode

IDW15G120C5B

Maximum ratings

Parameter

Symbol

Value (leg/device)

Unit

Repetitive peak reverse voltage

VRRM

1200

V

Continuous forward current for Rth(j-c,max)

TC = 154°C, D=1

TC = 135°C, D=1

TC = 25°C, D=1

IF

7.5 / 15

11 / 23

24 / 49

A

Surge non-repetitive forward current, sine halfwave

TC=25°C, tp=10ms

TC=150°C, tp=10ms

IF,SM

85 / 170

80 / 160

A

Non-repetitive peak forward current

TC = 25°C, tp=10 µs

IF,max

711 / 1422

A

i²t value

TC = 25°C, tp=10 ms

TC = 150°C, tp=10 ms

∫ i²dt

36 / 143

32 / 128

A²s

Diode dv/dt ruggedness

VR=0...960 V

dv/dt

80

V/ns

Power dissipation for Rth(j-c,max)

TC = 25°C

Ptot

100 / 200

W

Operating and storage temperature

Tj;Tstg

-

55…175

°C

Soldering temperature,

wavesoldering only allowed at leads

1.6mm (0.063 in.) from case for 10 s

Tsold

260

°C

Mounting torque

M3 and M4 screws

M

0.7

Nm

Thermal Resistances

Parameter

Symbol Conditions

Value (leg/device)

Unit

min.

typ.

max.

Characteristic

Diode thermal resistance,

junction

– case

Rth(j-c)

-

1.1/0.6

1.5/0.8

K/W

Thermal resistance,

junction

– ambient

Rth(j-a)

leaded

-

62

K/W

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IDW15G120C5B Datasheet(PDF) 4 Page - Infineon Technologies AG

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