IPD12CN10NG datasheet(1/12 Pages) INFINEON

Part #	IPD12CN10NG

Description	N-channel, normal level

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPB12CN10N G

IPD12CN10N G

IPI12CN10N G

IPP12CN10N G

OptiMOS™2 Power-Transistor

Features

• N-channel, normal level

• Excellent gate charge x R

DS(on) product (FOM)

• Very low on-resistance R

DS(on)

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC

1) for target application

• Ideal for high-frequency switching and synchronous rectification

• Halogen-free according to IEC61249-2-21

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

T C=25 °C

67

A

T C=100 °C

48

Pulsed drain current

2)

I D,pulse

T C=25 °C

268

Avalanche energy, single pulse

E AS

I D=67 A, R GS=25 W

154

mJ

Reverse diode dv /dt

dv /dt

I D=67 A, V DS=80 V,

di /dt =100 A/µs,

T j,max=175 °C

6

kV/µs

Gate source voltage

3)

V GS

±20

V

Power dissipation

P tot

T C=25 °C

125

W

Operating and storage temperature

T j, T stg

-55 ... 175

°C

IEC climatic category; DIN IEC 68-1

55/175/56

3) T

jmax=150°C and duty cycle D=0.01 for Vgs<-5V

Value

1)J-STD20 and JESD22

2) see figure 3

V

DS

100

V

R

DS(on),max (TO252)

12.4

m

W

I

D

67

A

Product Summary

Type

IPB12CN10N G

IPD12CN10N G

IPI12CN10N G

IPP12CN10N G

Package

PG-TO263-3

PG-TO252-3

PG-TO262-3

PG-TO220-3

Marking

12CN10N

Rev. 1.08

page 1

2013-07-09

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