PTVA104501EH datasheet(3/9 Pages) INFINEON

Part #	PTVA104501EH

Description	Thermally-Enhanced High Power RF LDMOS FET

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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3 / 9 page

Data Sheet

3 of 9

Rev. 02, 2014-07-22

PTVA104501EH

Typical RF Performance (data taken in production test fixture)

15

25

35

45

55

65

15

25

35

45

55

65

28

30

32

34

36

38

40

42

44

PIN (dBm)

Power Sweep, Pulsed RF

VDD = 50 V, IDQ = 200 mA, TCASE = 25°C,

128 μs pulse width, 10% duty cycle

960 MHz

1030 Mhz

1090 MHz

1150 MHz

1215 MHz

Output power

Efficiency

a104501eh_g1

12

14

16

18

20

22

28

30

32

34

36

38

40

42

44

PIN (dBm)

Power Sweep, Pulsed RF

VDD = 50 V, IDQ = 200 mA, TCASE = 25°C,

128 μs pulse width, 10% duty cycle

960 MHz

1030 MHz

1090 MHz

1150 MHz

1215 MHz

Gain

a104501eh_g2

50

55

60

65

70

16

17

18

19

20

900

1000

1100

1200

1300

Frequency (MHz)

Pulsed RF Performance

VDD = 50V, IDQ = 200mA, POUT= 450W (peak),

128 μs pulse width, 10% duty cycle

a104501eh_g3

Gain

Efficiency

0.0

0.1

0.2

0.3

-25

-20

-15

-10

-5

900

1000

1100

1200

1300

Frequency (MHz)

Pulsed RF Performance

VDD = 50V, IDQ = 200mA, POUT= 450W (peak),

128 μs pulse width, 10% duty cycle

Power Droop

IRL

a104501eh_g4

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PTVA104501EH Datasheet(PDF) 3 Page - Infineon Technologies AG

PTVA104501EH Datasheet(HTML) 3 Page - Infineon Technologies AG

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