SiS612EDNT

www.vishay.com

Vishay Siliconix

S13-1675-Rev. A, 29-Jul-13

1

Document Number: 62874

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

N-Channel 20 V (D-S) MOSFET

FEATURES

• Low Thermal Resistance PowerPAK Package

with Small Size and 0.75 mm Profile

• Typical ESD performance 3400 V

• Material categorization:



For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Battery Switch / Load Switch

• Power Management for Tablet PCs

and Mobile Computing

Notes

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

e. Maximum under steady state conditions is 81 °C/W.

g. Package limited.

PRODUCT SUMMARY

20

50

22.5 nC

50

50

Ordering Information:

SiS612EDNT-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

S

S

G

D

D

D

D

3.30 mm

3.30 mm

Bottom View

0.75 mm

N-Channel MOSFET

S

D

G

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

± 12

A

Pulsed Drain Current (t = 100 μs)

200

Continuous Source-Drain Diode Current

43.3

Single Pulse Avalanche Current

L = 0.1 mH

20

Single Pulse Avalanche Energy

20

mJ

Maximum Power Dissipation

52

W

33

Operating Junction and Storage Temperature Range

- 55 to 150

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

 10 s

24

33

°C/W

Maximum Junction-to-Case (Drain)

Steady State

1.9

2.4