SIGC84T120R3E

Edited by INFINEON Technologies, IFAG IPC TD VLS, L7677M, L7677T, L7677E, Rev 2.3, 02.07.2014

IGBT3 Power Chip

Features:



1200V Trench & Field Stop technology



low turn-off losses



short tail current



positive temperature coefficient



easy paralleling

This chip is used for:



power modules

G

C

E

Applications:



drives

Chip Type

Die Size

Package

SIGC84T120R3E

1200V

75A

9.13 x 9.15 mm

2

sawn on foil

Mechanical Parameters

Raster size

9.13 x 9.15

mm

2

Emitter pad size (incl. gate pad)

8 x (3.736 x 1.864)

Gate pad size

1.319 x 0.820

Area total

83.5

Thickness

140

µm

Wafer size

200

mm

Max.possible chips per wafer

306

Passivation frontside

Photoimide

Pad metal

3200 nm AlSiCu

Backside metal

Ni Ag

–system

suitable for epoxy and soft solder die bonding

Die bond

Electrically conductive glue or solder

Wire bond

Al, <500µm

Reject ink dot size

 0.65mm ; max 1.2mm

Recommended storage environment

Store in original container, in dry nitrogen, in dark

environment, < 6 month at an ambient temperature of 23°C