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SIGC84T120R3E Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SIGC84T120R3E Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 5 page SIGC84T120R3E Edited by INFINEON Technologies, IFAG IPC TD VLS, L7677M, L7677T, L7677E, Rev 2.3, 02.07.2014 IGBT3 Power Chip Features: 1200V Trench & Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling This chip is used for: power modules G C E Applications: drives Chip Type VCE IC Die Size Package SIGC84T120R3E 1200V 75A 9.13 x 9.15 mm 2 sawn on foil Mechanical Parameters Raster size 9.13 x 9.15 mm 2 Emitter pad size (incl. gate pad) 8 x (3.736 x 1.864) Gate pad size 1.319 x 0.820 Area total 83.5 Thickness 140 µm Wafer size 200 mm Max.possible chips per wafer 306 Passivation frontside Photoimide Pad metal 3200 nm AlSiCu Backside metal Ni Ag –system suitable for epoxy and soft solder die bonding Die bond Electrically conductive glue or solder Wire bond Al, <500µm Reject ink dot size 0.65mm ; max 1.2mm Recommended storage environment Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C |
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