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BAW56G-AE3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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BAW56G-AE3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page BAW56 Preliminary DIODE UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R601-269.b ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Non-Repetitive Peak Reverse Voltage VRM 100 V Repetitive Peak Reverse Voltage VRRM 75 V Working Peak Reverse Voltage VRWM 75 V DC Blocking Voltage VR 75 V RMS Reverse Voltage VR(RMS) 53 V Forward Continuous Current (Note 2) IFM 300 mA Average Rectified Output Current IO 150 mA Non-Repetitive Peak Forward Surge Current t=1.0µs IFSM 2.0 A t=1.0s 1.0 Power Dissipation (Note 2) PD 350 mW Junction Temperature TJ -65 ~ +150 °C Storage Temperature TSTG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient (Note 2) θJA 357 °C/W ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Reverse Breakdown Voltage VBR(R) IR = 2.5µA 75 V Forward Voltage (Note 1, 3) VF IF = 1.0mA 0.715 V IF = 10mA 0.855 V IF = 50mA 1.0 V IF = 150mA 1.25 V Peak Reverse Current (Note 1) IR VR = 75V 2.5 µA VR = 75V, TJ = 150°C 50 µA VR = 25V, TJ = 150°C 30 µA VR = 20V 25 nA Junction Capacitance CJ VR = 0, f = 1.0MHz 2.0 pF Reverse Recovery Time trr IF = IR = 10mA, IRR = 0.1 x IR, RL = 100Ω 4.0 ns Notes: 1.Short duration test pulse used to minimize self-heating effect. 2. Part mounted on FR-4 PC board with recommended pad layout. 3. Pulse Test: Pulse Width: 300μs, Duty Cycle ≤ 2%. |
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