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HWL30YRF_V1 Datasheet(PDF) 1 Page - Hexawave, Inc |
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HWL30YRF_V1 Datasheet(HTML) 1 Page - Hexawave, Inc |
1 / 4 page HWL30YRF L-Band GaAs Power FET Autumn 2002 V1 Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. Features • Low Cost GaAs Power FET • • • • Class A or Class AB Operation • Typical 16.5 dB Gain • 5V to 10V Operation Description The HWL30YRF is a Medium Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package. Absolute Maximum Ratings VDS Drain to Source Voltage +15V VGS Gate to Source Voltage -5V ID Drain Current IDSS IG Gate Current 3 mA TCH Channel Temperature 175°C TSTG Storage Temperature -65 to +175°C PT * Power Dissipation 6W * mounted on an infinite heat sink. Outline Dimensions Electrical Specifications (TA=25°C) f = 2400 MHz for all RF Tests Symbol Parameters & Conditions Units Min. Typ. Max. IDSS Saturated Current at VDS=5V, VGS=0V mA 500 600 900 VP Pinch-off Voltage at VDS=5V, ID=30mA V -3.5 -2.0 -1.5 gm Transconductance at VDS=5V, ID=300mA mS - 300 - Rth Thermal Resistance ° C/W - 15 25 P1dB Power Output at Test Points VDS=10V, ID=0.5IDSS dBm 30 31 - G1dB Gain at 1dB Compression Point VDS=10V, ID=0.5IDSS dB 15 16.5 - PAE Power-Added Efficiency (POUT = P1dB) VDS=10V, ID= ID=0.5IDSS % 35 45 - RF Package (Ceramic) |
Similar Part No. - HWL30YRF_V1_15 |
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Similar Description - HWL30YRF_V1_15 |
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