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HWL30YRF_V1 Datasheet(PDF) 2 Page - Hexawave, Inc |
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HWL30YRF_V1 Datasheet(HTML) 2 Page - Hexawave, Inc |
2 / 4 page HWL30YRF L-Band GaAs Power FET Autumn 2002 V1 Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. Typical Performance at 25°°°°C Output Power & Efficiency & Gain vs Input Power @ f=2.4GHz, Vds=10.0V, Ids= 0.5 Idss 0 10 20 30 40 0 5 10 15 20 Pin (dBm) Po (dBm) 0 10 20 30 40 50 60 Gain PAE (%) Po Gain Eff Output Power & Efficiency & Gain vs Input Power @ f=1.9GHz, Vds=10.0V, Ids= 0.5 Idss 0 10 20 30 40 0 2 4 6 8 10 12 14 16 18 20 22 Pin (dBm) Po (dBm) 0 10 20 30 40 50 60 Gain PAE (%) Po Gain Eff |
Similar Part No. - HWL30YRF_V1_15 |
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Similar Description - HWL30YRF_V1_15 |
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