BGF148 datasheet(6/14 Pages) INFINEON

Part #	BGF148

Description	7 line ESD and EMI interface protection device

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Manufacturer	INFINEON [Infineon Technologies AG]

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BGF148

Electrical Characteristics

Final Datasheet

6

Revision 1.9.2, 2014-04-02

2.2

Electrical Characteristics

Table 2-2

DC Characteristics at

T

A = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Resistor R1...R6

R1...R6

18

20

22

Ω

Reverse current of ESD diodes

IR

-

5

100

nA

VR =5.5 V

Breakdown voltage of ESD diodes

VBR

-6.5

-V

IBR =1mA

Table 2-3

RF Characteristics

at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Line capacitance

(Capacitance of each line to GND)

CL

1.2

pF

VR =0V, f =1MHz

Table 2-4

ESD Characteristics

at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Clamping voltage1)2)

1) Pulse at external pins, measurements at related internal pins

2) ANSI / ESDSTM5.5.1-Electrostatistic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP

conditions: Z0 =50 Ω, tp = 100 ns, tr = 0.6 ns, ITLP and VTLP average window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic

resistance using squares fit to TLP characteristics between ITLP1 = 2 A and ITLP2 = 15 A. Please refer to Application Note

AN210[1]

VCL

-

8.5

9

-

ITLP =1A

ITLP =16A

Dynamic resistance1)2)

RDYN

-0.03

-

Ω

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