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IDW40E65D2 Datasheet(PDF) 5 Page - Infineon Technologies AG

Part # IDW40E65D2
Description  Qualified according to JEDEC for target applications
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IDW40E65D2 Datasheet(HTML) 5 Page - Infineon Technologies AG

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IDW40E65D2
EmitterControlledDiode
Rev.2.1,2013-12-16
SwitchingCharacteristic,InductiveLoad
Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
-
36
-
ns
Diode reverse recovery charge
Qrr
-
0.40
-
µC
Diode peak reverse recovery current
Irrm
-
22.0
-
A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
-
-10000
-
A/µs
Tvj=25°C,
VR=400V,
IF=40.0A,
diF/dt=1000A/µs
Diode reverse recovery time
trr
-
75
-
ns
Diode reverse recovery charge
Qrr
-
0.13
-
µC
Diode peak reverse recovery current
Irrm
-
2.9
-
A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
-
-54
-
A/µs
Tvj=25°C,
VR=400V,
IF=40.0A,
diF/dt=200A/µs
SwitchingCharacteristic,InductiveLoad
Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
DiodeCharacteristic,atTvj=175°C/125°C
Diode reverse recovery time
trr
-
60
-
ns
Diode reverse recovery charge
Qrr
-
1.14
-
µC
Diode peak reverse recovery current
Irrm
-
32.0
-
A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
-
-8700
-
A/µs
Tvj=175°C,
VR=400V,
IF=40.0A,
diF/dt=1000A/µs
Diode reverse recovery time
trr
-
83
-
ns
Diode reverse recovery charge
Qrr
-
0.32
-
µC
Diode peak reverse recovery current
Irrm
-
5.6
-
A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
-
-51
-
A/µs
Tvj=125°C,
VR=400V,
IF=40.0A,
diF/dt=200A/µs


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