IGP20N60H3 datasheet(4/14 Pages) INFINEON

Part #	IGP20N60H3

Description	High speed switching series third generation

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Manufacturer	INFINEON [Infineon Technologies AG]

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4

IGP20N60H3

Highspeedswitchingseriesthirdgeneration

Rev.2.2,2014-03-11

Maximumratings

Parameter

Symbol

Value

Unit

Collector-emittervoltage,Tvj

≥25°C

VCE

600

V

DCcollectorcurrent,limitedbyTvjmax

TC=25°C

TC=100°C

IC

40.0

20.0

A

Pulsedcollectorcurrent,tplimitedbyTvjmax

ICpuls

80.0

A

Turn off safe operating area

VCE

≤600V,Tvj≤175°C,tp=1µs

-

80.0

A

Gate-emitter voltage

VGE

±20

V

Short circuit withstand time

VGE=15.0V,VCC

≤400V

Allowed number of short circuits < 1000

Time between short circuits:

≥ 1.0s

Tvj=150°C

tSC

5

µs

PowerdissipationTC=25°C

PowerdissipationTC=100°C

Ptot

170.0

85.0

W

Operating junction temperature

Tvj

-40...+175

°C

Storage temperature

Tstg

-55...+150

°C

Soldering temperature,

wave soldering 1.6 mm (0.063 in.) from case for 10s

260

°C

Mounting torque, M3 screw

Maximum of mounting processes: 3

M

0.6

Nm

ThermalResistance

Parameter

Symbol Conditions

Max.Value

Unit

Characteristic

IGBT thermal resistance,

junction - case

Rth(j-c)

0.88

K/W

Thermal resistance

junction - ambient

Rth(j-a)

62

K/W

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

StaticCharacteristic

Collector-emitter breakdown voltage

V(BR)CES VGE=0V,IC=2.00mA

600

-

V

Collector-emitter saturation voltage

VCEsat

VGE=15.0V,IC=20.0A

Tvj=25°C

Tvj=125°C

Tvj=175°C

-

1.95

2.30

2.50

2.40

-

V

Gate-emitter threshold voltage

VGE(th)

IC=0.29mA,VCE=VGE

4.1

5.1

5.7

V

Zero gate voltage collector current

ICES

VCE=600V,VGE=0V

Tvj=25°C

Tvj=175°C

-

40.0

1500.0

µA

Gate-emitter leakage current

IGES

VCE=0V,VGE=20V

-

100

nA

Transconductance

gfs

VCE=20V,IC=20.0A

-

10.9

-

S

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