IKW30N60T_15 datasheet(10/13 Pages) INFINEON

Part #	IKW30N60T

Description	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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IKW30N60T

TRENCHSTOP

™ Series

q

IFAG IPC TD VLS

10

Rev. 2.6 19.05.2015

700A/µs

800A/µs

900A/µs

1000A/µs

0A

5A

10A

15A

20A

T

J= 2 5 °C

T

J= 1 7 5 °C

700A/µs

800A/µs

900A/µs

1000A/µs

0A/µs

-150A/µs

-300A/µs

-450A/µs

-600A/µs

T

J= 2 5 °C

T

J= 1 7 5 °C

diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current

as a function of diode current

slope

(VR = 400V, IF = 30A,

Dynamic test circuit in Figure E)

Figure 26. Typical diode peak rate of fall of

reverse recovery current as a

function of diode current slope

(VR=400V, IF=30A,

Dynamic test circuit in Figure E)

0V

1V

2V

0A

10A

20A

30A

40A

50A

60A

70A

175°C

T

J = 2 5 °C

0°C

50°C

100°C

150°C

0.0V

0.5V

1.0V

1.5V

2.0V

30A

I

F =60A

15A

VF, FORWARD VOLTAGE

TJ, JUNCTION TEMPERATURE

Figure 27. Typical diode forward current as

a function of forward voltage

Figure 28. Typical diode forward voltage as a

function of junction temperature

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IKW30N60T Datasheet(PDF) 10 Page - Infineon Technologies AG

IKW30N60T Datasheet(HTML) 10 Page - Infineon Technologies AG

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