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IPB020N10N5 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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IPB020N10N5 Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 12 page 2 OptiMOSª5Power-Transistor,100V IPB020N10N5 Rev.2.1,2014-05-05 Final Data Sheet D²PAK Drain Pin 2, Tab Gate Pin 1 Source Pin 3 1Description Features •N-channel,normallevel •OptimizedforFOMOSS •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 2.0 m Ω ID 120 A Type/OrderingCode Package Marking RelatedLinks IPB020N10N5 PG-TO 263-3 020N10N5 - 1) J-STD20 and JESD22 |
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