IPL65R099C7 datasheet(6/15 Pages) INFINEON

Part #	IPL65R099C7

Description	Increased MOSFET dv/dt ruggedness

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Manufacturer	INFINEON [Infineon Technologies AG]

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6

650VCoolMOS™C7PowerTransistor

IPL65R099C7

Rev.2.0,2013-11-05

Final Data Sheet

4Electricalcharacteristics

atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Drain-source breakdown voltage

V(BR)DSS

650

-

V

VGS=0V,ID=1mA

Gate threshold voltage

V(GS)th

3

3.5

4

V

VDS=VGS,ID=0.59mA

Zero gate voltage drain current

IDSS

-

10

1

-

µA

VDS=650,VGS=0V,Tj=25°C

VDS=650,VGS=0V,Tj=150°C

Gate-source leakage current

IGSS

-

100

nA

VGS=20V,VDS=0V

Drain-source on-state resistance

RDS(on)

-

0.088

0.210

0.099

-

Ω

VGS=10V,ID=5.9A,Tj=25°C

VGS=10V,ID=5.9A,Tj=150°C

Gate resistance

RG

-

0.9

-

Ω

f=1MHz,opendrain

Table5Dynamiccharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Input capacitance

Ciss

-

2140

-

pF

VGS=0V,VDS=400V,f=250kHz

Output capacitance

Coss

-

33

-

pF

VGS=0V,VDS=400V,f=250kHz

Effective output capacitance, energy

Co(er)

-

69

-

pF

VGS=0V,VDS=0...400V

Effective output capacitance, time related

2)

Co(tr)

-

763

-

pF

ID=constant,VGS=0V,VDS=0...400V

Turn-on delay time

td(on)

-

11

-

ns

VDD=400V,VGS=13V,ID=5.9A,

RG=5.3

Ω;seetable9

Rise time

tr

-

5

-

ns

VDD=400V,VGS=13V,ID=5.9A,

RG=5.3

Ω;seetable9

Turn-off delay time

td(off)

-

89

-

ns

VDD=400V,VGS=13V,ID=5.9A,

RG=5.3

Ω;seetable9

Fall time

tf

-

12

-

ns

VDD=400V,VGS=13V,ID=5.9A,

RG=5.3

Ω;seetable9

Table6Gatechargecharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Gate to source charge

Qgs

-

11

-

nC

VDD=400V,ID=5.9A,VGS=0to10V

Gate to drain charge

Qgd

-

15

-

nC

VDD=400V,ID=5.9A,VGS=0to10V

Gate charge total

Qg

-

45

-

nC

VDD=400V,ID=5.9A,VGS=0to10V

Gate plateau voltage

Vplateau

-

5.0

-

V

VDD=400V,ID=5.9A,VGS=0to10V

1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V

2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

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