TPS54319

SLVSA83 – JUNE 2010

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

PACKAGE

PART NUMBER

–40°C to 150°C

3 × 3 mm QFN

TPS54319RTE

(1)

For the most current package and ordering information, see the Package Option Addendum at the end

of this document, or see the TI website at www.ti.com

ABSOLUTE MAXIMUM RATINGS

(1)

VALUE

UNIT

MIN

MAX

Input voltage

VIN

–0.3

7

EN

–0.3

7

BOOT

PH + 7

VSENSE

–0.3

3

V

COMP

–0.3

3

PWRGD

–0.3

7

SS/TR

–0.3

3

RT/CLK

–0.3

6

Output voltage

BOOT-PH

7

PH

–0.6

7

V

PH 10 ns Transient

–2

10

Source current

EN

100

µA

RT/CLK

100

µA

Sink current

COMP

100

µA

PWRGD

10

mA

SS/TR

100

µA

1

kV

Electrostatic discharge (CDM) QSS 009-147 (JESD22-C101B.01)

500

V

Temperature

–40

150

°C

–65

150

°C

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under ELECTRICAL

SPECIFICATIONS is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

The human body model is a 100-pF capacitor discharged through a 1.5-k

Ω resistor into each pin. The machine model is a 200-pF

capacitor discharged directly into each pin.

2

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