Electronic Components Datasheet Search |
|
SIS402DN Datasheet(PDF) 4 Page - Vishay Telefunken |
|
SIS402DN Datasheet(HTML) 4 Page - Vishay Telefunken |
4 / 13 page www.vishay.com 4 Document Number: 68684 S09-1086-Rev. C, 15-Jun-09 Vishay Siliconix SiS402DN TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C 10 VSD -Source-to-Drain Voltage (V) 1 100 TJ = 25 °C 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0.000 0.003 0.006 0.009 0.012 0.015 02 4 6 8 10 VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID =19 A 0.01 0 1 40 50 10 600 Time (s) 30 20 0.1 10 100 Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 1ms 10 ms 100 ms Limited byRDS(on)* BVDSS Limited 100 µs IDM Limited I Limited D(on) 1s 10 s DC |
Similar Part No. - SIS402DN |
|
Similar Description - SIS402DN |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |