SIS406DN datasheet(4/13 Pages) TFUNK

Part #	SIS406DN

Description	N-Channel 30-V (D-S) MOSFET

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Manufacturer	TFUNK [Vishay Telefunken]

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Document Number: 68805

S-82301-Rev. A, 22-Sep-08

Vishay Siliconix

SiS406DN

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD -Source-to-Drain Voltage (V)

1

0.01

0.001

0.1

10

100

TJ = 150 °C

TJ = - 50 °C

TJ = 25 °C

- 1.0

- 0.7

- 0.4

- 0.1

0.2

0.5

--50

--25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

ID =5mA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.000

0.006

0.012

0.018

0.024

0.030

2

345

67

8

910

VGS - Gate-to-Source Voltage (V)

TJ =25 °C

TJ = 125 °C

ID =12A

0

30

60

90

120

150

0

1

0

.

00.01

Time (s)

0.1

Safe Operating Area, Junction-to-Ambient

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

100

1

0.1

1

10

100

0.01

10

0.1

TA =25 °C

Single Pulse

1s

10 s

100 s

DC

Limited byRDS(on)*

BVDSS Limited

1ms

100 µs

10 ms

100 ms

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