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SISA12ADN Datasheet(PDF) 2 Page - Vishay Telefunken |
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SISA12ADN Datasheet(HTML) 2 Page - Vishay Telefunken |
2 / 13 page www.vishay.com 2 Document Number: 63234 S13-0113-Rev. A, 21-Jan-13 Vishay Siliconix SiSA12ADN New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient V DS/TJ ID = 250 µA 16 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ - 5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.1 2.2 V Gate-Source Leakage IGSS VDS = 0 V, VGS = + 20, - 16 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V 25 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 10 A 0.0032 0.0043 VGS = 4.5 V, ID = 7 A 0.0044 0.0060 Forward Transconductancea gfs VDS = 10 V, ID = 10 A 51 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 2070 pF Output Capacitance Coss 600 Reverse Transfer Capacitance Crss 51 Crss/Ciss Ratio 0.025 0.050 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 10 A 29.5 45 nC VDS = 15 V, VGS = 4.5 V, ID = 10 A 13.6 21 Gate-Source Charge Qgs 5.2 Gate-Drain Charge Qgd 2.6 Output Charge Qoss VDS = 15 V, VGS = 0 V 16 Gate Resistance Rg f = 1 MHz 0.3 1.7 3.4 Turn-On Delay Time td(on) VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 10 V, Rg = 1 10 20 ns Rise Time tr 10 20 Turn-Off Delay Time td(off) 25 50 Fall Time tf 10 20 Turn-On Delay Time td(on) VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 4.5 V, Rg = 1 20 40 Rise Time tr 15 30 Turn-Off Delay Time td(off) 22 45 Fall Time tf 10 20 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 25 A Pulse Diode Forward Currenta ISM 80 Body Diode Voltage VSD IS = 10 A 0.86 1.2 V Body Diode Reverse Recovery Time trr IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 27 55 ns Body Diode Reverse Recovery Charge Qrr 15 30 nC Reverse Recovery Fall Time ta 13 ns Reverse Recovery Rise Time tb 14 |
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