SiS822DNT

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Vishay Siliconix

S14-1340-Rev. A, 30-Jun-14

4

Document Number: 62965

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

Safe Operating Area, Junction-to-Ambient

0.0

0.2

0.4

0.6

0.8

1.0

1.2

10

1

100

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

1.9

- 50

- 25

0

25

50

75

100

125

150

0

0.02

0.04

0.06

0.08

02

4

6

8

10

0

10

20

30

40

50

Time (s)

10

1000

0.1

0.01

0.001

100

1

100

1

0.1

1

10

100

0.01

10

0.1

Single Pulse

100 µs

1s

10 s

BVDSS Limited

1ms

10 ms

100 ms

DC

Limited by I

DM