SISA10DN datasheet(5/13 Pages) TFUNK

Part #	SISA10DN

Description	N-Channel 30 V (D-S) MOSFET

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Manufacturer	TFUNK [Vishay Telefunken]

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5 / 13 page

Document Number: 63819

S12-0806-Rev. A, 16-Apr-12

www.vishay.com

5

Vishay Siliconix

SiSA10DN

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical support, please contact: pmostechsupport@vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

20

40

60

80

100

0

25

50

75

100

125

150

T

C - Case Temperature (°C)

Package Limited

Power, Junction-to-Case

0

10

20

30

40

25

50

75

100

125

150

T

C - Case Temperature (°C)

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