SIZ902DT datasheet(4/14 Pages) TFUNK

Part #	SIZ902DT

Description	Dual N-Channel 30 V (D-S) MOSFETs

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Manufacturer	TFUNK [Vishay Telefunken]

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Document Number: 63465

S11-2380 Rev. B, 28-Nov-11

Vishay Siliconix

SiZ902DT

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

10

20

30

40

50

60

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS =10 V thru 4 V

VGS =3 V

VGS =2 V

VDS - Drain-to-Source Voltage (V)

0.006

0.008

0.010

0.012

0.014

0

102030

405060

VGS =10 V

VGS =4.5 V

ID - Drain Current (A)

0

2

4

6

8

10

0

3

6

9

12

15

VDS =24 V

VDS =15 V

ID = 13.8 A

VDS =7.5 V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

TC = 25 °C

TC = 125 °C

TC =- 55 °C

VGS - Gate-to-Source Voltage (V)

0

200

400

600

800

1000

1200

0

5

10

15

20

25

30

Ciss

Coss

Crss

VDS - Drain-to-Source Voltage (V)

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

- 50

-- 25

0

25

50

75

100

125

150

ID =13.8 A

VGS =10 V;4.5 V

TJ -Junction Temperature (°C)

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