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S9648-200SB Datasheet(PDF) 3 Page - Hamamatsu Corporation |
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S9648-200SB Datasheet(HTML) 3 Page - Hamamatsu Corporation |
3 / 5 page Photo IC diode S9648-200SB 3 Operating circuit example KPICC0091EC The photo IC diode must be reverse-biased so that a positive potential is applied to the cathode. To eliminate high-frequency components, we recommend placing a load capacitance CL in parallel with load resistance RL as a low-pass filter. Cutoff frequency (fc) 2 πCLRL 1 ≈ Photodiode for signal offset Cathode Anode CL RL Vout Reverse bias power supply The drawing surrounded by the dotted line shows a schematic diagram of the photo IC. Current amp (Approx. 30000 times) Photodiode for signal detection Internal protection resistance (Approx. 150 Ω) Rise/fall times vs. load resistance Directivity 0.1 1 10 100 0.01 100 10 k 1 k 100 k Load resistance (Ω) 1 M (Typ. Ta=25 °C, VR=7.5 V, λ=560 nm, Vo=2.5 V) Rise time Fall time 90° 80° 70° 60° 50° 40° 30° 90° 80° 70° 60° 50° 40° 30° 20° 10° 0° 10° 20° 0 20 40 60 80 100 20 40 60 80 100 Relative sensitivity (%) (Typ. Ta=25 °C, tungsten lamp) KPICB0077EB KPICB0174EA |
Similar Part No. - S9648-200SB_15 |
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Similar Description - S9648-200SB_15 |
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