BGA7M1N6 datasheet(10/22 Pages) INFINEON

Part #	BGA7M1N6

Description	Silicon Germanium Low Noise Amplifier for LTE

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Manufacturer	INFINEON [Infineon Technologies AG]

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BGA7M1N6

Electrical Characteristics

Data Sheet

10

Revision 3.1 (Min/Max), 2014-02-11

2

Electrical Characteristics

2.1

Measured RF Characteristics Band 1

Table 4

Electrical Characteristics:

1) T

A = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V,

f = 2110 - 2170 MHz

1) Based on the application described in chapter 3

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Supply voltage

VCC

1.5

–

3.3

V

–

Supply current

ICC

–

4.4

5.4

mA

ON-mode

–0.2

3

μA

OFF-mode

Power On voltage

Vpon

1.0

–

Vcc

V

ON-mode

0

–

0.4

V

OFF-mode

Power On current

Ipon

–5

10

μA

ON-mode

––

1

μA

OFF-mode

Insertion power gain

|S21|

2

11.1

12.6

14.1

dB

–

Noise figure2)

2) PCB losses are subtracted

NF

–

0.65

1.2

dB

ZS =50 Ω

Input return loss3)

3) Verification based on AQL; not 100% tested in production

RLin

710

–

dB

–

Output return loss3)

RLout

10

16

–

dB

–

Reverse isolation3)

1/|S12|

2

15

19

–

dB

–

Power gain settling time4)5)

4) To be within 1 dB of the final gain

5) Guaranteed by device design; not tested in production

tS

–4

7

μs

OFF- to ON-mode

Inband input 1dB-compression

point3)

IP1dB

-7

-3

–

dBm

–

Inband input 3rd-order intercept

point6)3)

6) Input power = -30 dBm for each tone

IIP3

+2

+7

–

dBm

f1 = 2140 MHz

f2 = f1 +/-10 MHz

Stability5)

k

–> 1

–

f = 20 MHz ... 10 GHz

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