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IKA10N60T Datasheet(PDF) 10 Page - Infineon Technologies AG

Part # IKA10N60T
Description  IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Download  13 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IKA10N60T Datasheet(HTML) 10 Page - Infineon Technologies AG

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IKA10N60T
TRENCHSTOP
™ Series
IFAG IPC TD VLS
10
Rev. 2.5 20.09.2013
200A /µs
400A /µs
600A /µs
800A /µs
0A
2A
4A
6A
8A
10A
12A
14A
T
J= 2 5 °C
T
J= 1 7 5 °C
400A/µs
600A/µs
800A/µs
0A/µs
-100A/µs
-200A/µs
-300A/µs
-400A/µs
-500A/µs
-600A/µs
-700A/µs
T
J=25°C
T
J=175°C
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(VR = 400V, IF = 10A,
Dynamic test circuit in Figure E)
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=400V, IF=10A,
Dynamic test circuit in Figure E)
0V
1V
2V
0A
10A
20A
30A
175°C
T
J= 2 5 ° C
-50°C
0°C
50°C
100°C
150°C
0,0V
0,5V
1,0V
1,5V
2,0V
10A
I
F= 2 0 A
5A
VF, FORWARD VOLTAGE
TJ, JUNCTION TEMPERATURE
Figure 27. Typical diode forward current as
a function of forward voltage
Figure 28. Typical diode forward voltage as a
function of junction temperature


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