IKA10N60T datasheet(7/13 Pages) INFINEON

Part #	IKA10N60T

Description	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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IKA10N60T

TRENCHSTOP

™ Series

IFAG IPC TD VLS

7

Rev. 2.5 20.09.2013

0 A

5 A

1 0A

1 5 A

0 ,0m J

0 ,2m J

0 ,4m J

0 ,6m J

0 ,8m J

1 ,0m J

E

ts*

E

off

*) E

on a n d E tsin c lu d e lo s s e s

d u e to d io de re c ov e ry

E

on*











0,0 mJ

0,2 mJ

0,4 mJ

0,6 mJ

0,8 mJ

E

ts*

E

on*

*) E

on and Ets inc lu de los s es

due to diode recovery

E

off

IC, COLLECTOR CURRENT

RG, GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, TJ = 175°C,

VCE = 400V, VGE = 0/15V, rG = 23Ω,

Dynamic test circuit in Figure E)

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, TJ = 175°C,

VCE = 400V, VGE = 0/15V, IC = 10A,

Dynamic test circuit in Figure E)

50°C

100°C

150°C

0,0m J

0,1m J

0,2m J

0,3m J

0,4m J

0,5m J

0,6m J

E

ts*

E

on*

*) E

on a n d E ts in c lu d e lo s s e s

due to diode recovery

E

off

30 0V

35 0V

4 00 V

4 50 V

50 0V

55 0V

0 ,0m J

0 ,2m J

0 ,4m J

0 ,6m J

0 ,8m J

E

ts *

E

on*

*) E

on a n d E ts in c lu d e lo s s e s

d ue to diod e rec ov ery

E

off

TJ, JUNCTION TEMPERATURE

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, VCE = 400V,

VGE = 0/15V, IC = 10A, rG = 23Ω,

Dynamic test circuit in Figure E)

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

(inductive load, TJ = 175°C,

VGE = 0/15V, IC = 10A, rG = 23Ω,

Dynamic test circuit in Figure E)

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IKA10N60T Datasheet(PDF) 7 Page - Infineon Technologies AG

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