IKB10N60T_15 datasheet(3/13 Pages) INFINEON | IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

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IKB10N60T Datasheet(PDF) 3 Page - Infineon Technologies AG

Part #	IKB10N60T

Description	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Download	13 Pages

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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IKB10N60T

TRENCHSTOP

™ Series

p

IFAG IPC TD VLS

3

Rev. 2.6 11.05.2015

Switching Characteristic, Inductive Load, at Tj=25 C

Parameter

Symbol

Conditions

Value

Unit

min.

typ.

max.

IGBT Characteristic

Turn-on delay time

t d( o n)

T j= 2 5  C,

V CC = 4 0 0 V, I C = 1 0 A,

V GE = 0 / 1 5 V , r G = 2 3  ,

L = 6 0 n H, C  = 4 0 p F

L , C  f r o m F i g . E

Energy losses include

“tail” and diode reverse

recovery.

-

12

-

ns

Rise time

t r

-

8

-

Turn-off delay time

t d( of f)

-

215

-

Fall time

t f

-

38

-

Turn-on energy

Eon

-

0.16

-

mJ

Turn-off energy

Eo ff

-

0.27

-

Total switching energy

Ets

-

0.43

-

Anti-Parallel Diode Characteristic

Diode reverse recovery time

t rr

T j =2 5 C,

VR = 4 00 V , IF =1 0 A,

diF/dt =8 8 0 A/ s

-

115

-

ns

Diode reverse recovery charge

Q rr

-

0.38

-

µC

Diode peak reverse recovery current

I rr m

-

10

-

A

Diode peak rate of fall of reverse

recovery current during t b

dirr /d t

-

680

-

A/

s

Switching Characteristic, Inductive Load, at Tj=175 C

Parameter

Symbol

Conditions

Value

Unit

min.

typ.

max.

IGBT Characteristic

Turn-on delay time

t d( o n)

T j= 1 7 5  C,

V CC = 4 0 0 V, I C = 1 0 A,

V GE = 0 / 1 5 V , r G = 2 3  ,

L = 6 0 n H, C  = 4 0 p F

L , C  f r o m F i g . E

Energy losses include

“tail” and diode reverse

recovery.

-

10

-

ns

Rise time

t r

-

11

-

Turn-off delay time

t d( of f)

-

233

-

Fall time

t f

-

63

-

Turn-on energy

Eon

-

0.26

-

mJ

Turn-off energy

Eo ff

-

0.35

-

Total switching energy

Ets

-

0.61

-

Anti-Parallel Diode Characteristic

Diode reverse recovery time

t rr

T j =1 7 5 C

VR = 4 00 V , IF =1 0 A,

diF/dt =8 8 0 A/ s

-

200

-

ns

Diode reverse recovery charge

Q rr

-

0.92

-

µC

Diode peak reverse recovery current

I rr m

-

13

-

A

Diode peak rate of fall of reverse

recovery current during t b

dirr /d t

-

390

-

A/

s

Similar Part No. - IKB10N60T_15

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	IKB10N60T	396Kb / 14P	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Rev. 2 Oct-04

Similar Description - IKB10N60T_15

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