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IKB15N60T Datasheet(PDF) 9 Page - Infineon Technologies AG

Part # IKB15N60T
Description  IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IKB15N60T Datasheet(HTML) 9 Page - Infineon Technologies AG

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IKB15N60T
TRENCHSTOP
™ Series
q
IFAG IPC TD VLS
9
Rev. 2.8 11.05.2015
1µs
10µs 100µs
1m s
10m s 100m s
10
-2K/W
10
-1K/W
10
0K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
1µs
10µs 100µs
1m s
10m s 100m s
10
-2K/W
10
-1K/W
10
0K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
tP, PULSE WIDTH
tP, PULSE WIDTH
Figure 21. IGBT transient thermal
impedance
(D = tp / T)
Figure 22. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
400A/µs
600A/µs
800A/µs
0ns
40ns
80ns
120ns
160ns
200ns
T
J= 2 5 °C
T
J= 1 7 5 °C
400A/µs
600A/µs
800A/µs
0.0µC
0.2µC
0.4µC
0.6µC
0.8µC
1.0µC
T
J= 2 5 °C
T
J= 1 7 5 °C
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=400V, IF=15A,
Dynamic test circuit in Figure E)
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(VR = 400V, IF = 15A,
Dynamic test circuit in Figure E)
R , ( K / W )
 , ( s )  
0.06991
1.11*10
-1
6.53*10
-2
0.43036
2.552*10
-2
0.53839
3.914*10
-3
0.58718
4.92*10
-4
0.23695
7.19*10
-5
0.03700
7.4*10
-6
C1=1/ R1
R1
R2
C2=2/R2
R , ( K / W )
 , ( s )  
0.13265
5.67*10
-2
0.37007
1.558*10
-2
0.30032
2.147*10
-3
0.34701
2.724*10
-4
C1=1/ R1
R1
R2
C2=2/R2


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