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IKD04N60RF Datasheet(PDF) 4 Page - Infineon Technologies AG

Part # IKD04N60RF
Description  IGBT with integrated diode in packages offering space saving advantage
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IKD04N60RF Datasheet(HTML) 4 Page - Infineon Technologies AG

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IKD04N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Rev.2.5,2014-03-12
Maximumratings
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj
≥25°C
VCE
600
V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC
8.0
4.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax
ICpuls
12.0
A
Turn off safe operating area
VCE
≤600V,Tvj≤175°C,tp=1µs
-
12.0
A
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF
8.0
4.0
A
Diodepulsedcurrent,tplimitedbyTvjmax
IFpuls
12.0
A
Gate-emitter voltage
VGE
±20
V
Short circuit withstand time
VGE=15.0V,VCC
≤400V
Allowed number of short circuits < 1000
Time between short circuits:
≥ 1.0s
Tvj=150°C
tSC
5
µs
PowerdissipationTC=25°C
Ptot
75.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020)
260
°C
ThermalResistance
Parameter
Symbol Conditions
Max.Value
Unit
Characteristic
IGBT thermal resistance,
1)
junction - case
Rth(j-c)
2.00
K/W
Diode thermal resistance,
2)
junction - case
Rth(j-c)
4.50
K/W
Thermal resistance, min. footprint
junction - ambient
Rth(j-a)
75
K/W
Thermal resistance, 6cm² Cu on
PCB
junction - ambient
Rth(j-a)
50
K/W
1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple.
2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple.


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