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MGBR10S45G-T27-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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MGBR10S45G-T27-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page MGBR10S45 DIODE UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R601-115.D ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage VRM 45 V Working Peak Reverse Voltage VRWM 45 V Peak Repetitive Reverse Voltage VRRM 45 V RMS Reverse Voltage VR(RMS) 32 V Average Rectified Output Current TC=140°C IO 10 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 150 A Operating Junction Temperature TJ -65~+150 °C Storage Temperature TSTG -65~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT TO-220-2 60 TO-252 TO-252D 110 Junction to Ambient TO-277 θJA 73 (Note 3) °C/W TO-220-2 2 TO-252 TO-252D 2.5 Junction to Case TO-277 θJC 13 (Note 3) °C/W ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Reverse Breakdown Voltage (Note 1) V(BR)R IR=0.45mA 45 V IF=10A, TJ=25°C 0.48 V Forward Voltage Drop VFM IF=10A, TJ=125°C 0.43 V VR=45V, TJ=25°C 50 500 μA Leakage Current (Note 1) IRM VR=45V, TJ=125°C 12 40 mA Notes: 1. Short duration pulse test used to minimize self-heating effect. 2. Thermal resistance junction to case mounted on heatsink. 3. Mounted on an FR4 PCB, single-sided copper, with 100cm 2 copper pad area. |
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