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SIHLIZ14G Datasheet(PDF) 1 Page - Vishay Telefunken |
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SIHLIZ14G Datasheet(HTML) 1 Page - Vishay Telefunken |
1 / 8 page Document Number: 91315 www.vishay.com S09-0896-Rev. B, 25-May-09 1 Power MOSFET IRLIZ14G, SiHLIZ14G Vishay Siliconix FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive •RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 0.79 mH, RG = 25 Ω, IAS = 10 A (see fig. 12). c. ISD ≤ 10 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω)VGS = 5.0 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single N-Channel MOSFET G D S S D G TO-220 FULLPAK Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free IRLIZ14GPbF SiHLIZ14G-E3 SnPb IRLIZ14G SiHLIZ14G ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 10 Continuous Drain Current VGS at 5.0 V TC = 25 °C ID 8.0 A TC = 100 °C 5.7 Pulsed Drain Currenta IDM 32 Linear Derating Factor 0.18 W/°C Single Pulse Avalanche Energyb EAS 39.5 mJ Maximum Power Dissipation TC = 25 °C PD 27 W Peak Diode Recovery dV/dtc dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply |
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