NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning

circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active

area, high UV sensitivity yet very low noise. The built-in thermoelectric cooler (air cooled) allows a long exposure time achieving a high S/N even

at low light levels. The cap uses a sapphire glass window hermetically welded for high reliability.

Features

l Wide active area

Pixel pitch: 50 µm (S5930 series)

25 µm (S5931 series)

Pixel height: 2.5 mm

l High UV sensitivity with good stability

l Low dark current and high saturation charge allow a long

integration time and a wide dynamic range at room temperature

l Excellent output linearity and sensitivity spatial uniformity

l Start pulse and clock pulses are CMOS logic compatible

l Built-in air-cooled thermoelectric cooler

(setting temperature: 0 ˚C)

Applications

l Multichannel spectrophotometry

l Image readout system

IMAGE

SENSOR

NMOS linear image sensor

Built-in thermoelectric cooler ensures long exposure time and stable operation.

S5930/S5931 series

s Selection guide

Type No.

Number of pixels

Pixel size

[µm (H) × µm (V)]

Active area size

[mm (H) × mm (V)]

S5930-256S

256

12.8 × 2.5

S5930-512S

512

50 × 2500

25.6 × 2.5

S5931-512S

512

12.8 × 2.5

S5931-1024S

1024

25 × 2500

25.6 × 2.5

In addition to S5930/S5931 series, Hamamatsu provides S8382/S8383 series thermoelectrically cooled NMOS linear image

sensors that offer higher sensitivity in the near IR range. Major characteristics of S8382/S8383 series are almost identical with

S5930/S5931 series except that the peak sensitivity wavelength is 750 nm (see “s Spectral response”) and the saturation

charge is 90 m

lx .s.

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