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MT46V32M8TG-6 Datasheet(PDF) 6 Page - Micron Technology |
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MT46V32M8TG-6 Datasheet(HTML) 6 Page - Micron Technology |
6 / 8 page 6 256Mb: x4, x8, x16 DDR333 SDRAM Micron Technology, Inc., reserves the right to change products or specifications without notice. 256Mx4x8x16DDR333_B.p65 – Rev. B; Pub. 10/01 ©2001, Micron Technology, Inc. 256Mb: x4, x8, x16 DDR333 SDRAM Addendum PRELIMINARY GENERAL DESCRIPTION The DDR333 SDRAM is a high-speed CMOS, dy- namic random-access memory that operates at a fre- quency of 167 MHz (tCK=6ns) with a peak data trans- fer rate of 333Mb/s/p. DDR333 continues to use the JEDEC standard SSTL_2 interface and the 2n-prefetch architecture. The standard DDR200/DDR266 data sheets also pertain to the DDR333 device and should be referenced for a complete description of DDR SDRAM function- ality and operating modes. However, to meet the faster DDR333 operating frequencies, some of the AC timing parameters are slightly tighter. This addendum data sheet will concentrate on the key differences required to support the enhanced speeds. In addition to the standard 66-pin TSOP package, a 60-ball FBGA package is utilized for DDR333. This JEDEC-defined package promotes better package para- sitic parameters and a smaller footprint. CAPACITANCE (TSOP) (Notes: 1-5, 14-17, 33; notes appear in DDR200/266 data sheets) (0°C ≤ T A ≤ 70°C; VDDQ = +2.5V ±0.2V, VDD = +2.5V ±0.2V) PARAMETER SYMBOL MIN MAX UNITS NOTES Delta Input/Output Capacitance: DQs, DQS, DM (for x4 or x8 devices) DCIO – 0.50 pF 13, 24 DQ0-DQ7, LDQS, LDM (for lower byte of x16 devices), DCIO – 0.50 pF 13, 24 DQ8-DQ15, UDQS, UDM (for upper byte of x16 devices) DCIO – 0.50 pF 13, 24 Delta Input Capacitance: Command and Address DCI1 – 0.50 pF 13, 29 Delta Input Capacitance: CK, CK# DCI2 – 0.25 p F 13, 29 Input/Output Capacitance: DQs, DQS, DM (LDQS, LDM, UDM) CIO 4.0 5.0 pF 13 Input Capacitance: Command and Address CI1 2.0 3.0 pF 13 Input Capacitance: CK, CK# CI2 2.0 3.0 p F 13 Input Capacitance: CKE CI3 2.0 3.0 pF 13 CAPACITANCE (FBGA) (Notes: 1-5, 14-17, 33; notes appear in DDR200/266 data sheets) (0°C ≤ T A ≤ 70°C; VDDQ = +2.5V ±0.2V, VDD = +2.5V ±0.2V) PARAMETER SYMBOL MIN MAX UNITS NOTES Delta Input/Output Capacitance: DQs, DQS, DM (for x4 or x8 devices) DCIO – 0.50 pF 13, 24 DQ0-DQ7, LDQS, LDM (for lower byte of x16 devices), DCIO – 0.50 pF 13, 24 DQ8-DQ15, UDQS, UDM (for upper byte of x16 devices) DCIO – 0.50 pF 13, 29 Delta Input Capacitance: Command and Address DCI1 – 0.50 pF 13, 29 Delta Input Capacitance: CK, CK# DCI2 – 0.25 p F 13, 29 Input/Output Capacitance: DQs, DQS, DM (LDQS, LDM, UDM) CIO 3.50 4.00 pF 13 Input Capacitance: Command and Address CI1 1.50 2.50 pF 13 Input Capacitance: CK, CK# CI2 1.50 2.50 p F 13 Input Capacitance: CKE CI3 1.50 2.50 pF 13 |
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