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MT28F322D20FH-80BET Datasheet(PDF) 1 Page - Micron Technology

Part # MT28F322D20FH-80BET
Description  FLASH MEMORY
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Manufacturer  MICRON [Micron Technology]
Direct Link  http://www.micron.com
Logo MICRON - Micron Technology

MT28F322D20FH-80BET Datasheet(HTML) 1 Page - Micron Technology

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1
2 Meg x 16 Async/Page/Burst Flash Memory
©2002, Micron Technology, Inc.
MT28F322D20FH_4.p65 – Rev. 4, Pub. 7/02
2 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
FLASH MEMORY
MT28F322D20
MT28F322D18
Low Voltage, Extended Temperature
0.18µm Process Technology
BALL ASSIGNMENT
58-Ball FBGA
FEATURES
• Flexible dual-bank architecture
– Support for true concurrent operation with zero
latency
– Read bank a during program bank b and vice versa
– Read bank a during erase bank b and vice versa
• Basic configuration:
Seventy-one erasable blocks
– Bank a (8Mb for data storage)
– Bank b (24Mb for program storage)
•VCC, VCCQ, VPP voltages
– 1.70V (MIN), 1.90V (MAX) VCC, VCCQ
(MT28F322D18 only)
– 1.80V VCC, VCCQ (MIN); 2.20V VCC (MAX)and 2.25V
VCCQ (MAX) (MT28F322D20 only)
– 0.9V (TYP) VPP (in-system PROGRAM/ERASE)
– 12V ±5% (HV) VPP tolerant (factory programming
compatibility)
• Random access time: 70ns/80ns @ 1.70V VCC
• Burst Mode read access (MT28F322D20)
– MAX clock rate: 54 MHz (tCLK = 18.5ns)
– Burst latency: 70ns @ 1.80V VCC and 54 MHz
tACLK: 17ns @ 1.80V VCC and 54 MHz
• Page Mode read access1
– Eight-word page
– Interpage read access: 70ns/80ns @ 1.80V
– Intrapage read access: 30ns @ 1.80V
• Low power consumption (VCC = 2.20V)
– Asynchronous READ < 15mA (MAX)
– Standby < 50µA
– Automatic power saving feature (APS)
• Enhanced write and erase suspend options
– ERASE-SUSPEND-to-READ within same bank
– PROGRAM-SUSPEND-to-READ within same bank
– ERASE-SUSPEND-to-PROGRAM within same bank
• Dual 64-bit chip protection registers for security
purposes
• Cross-compatible command support
– Extended command set
– Common flash interface
• PROGRAM/ERASE cycle
– 100,000 WRITE/ERASE cycles per block
NOTE: 1. Data based on MT28F322D20 device.
2. A “5” in the part mark represents two different
frequencies: 54 MHz (MT28F322D20) or 52 MHz
(MT28F322D18)
A
B
C
D
E
F
G
1
2
3
4
5
6
7
8
Top View
(Ball Down)
A11
A12
A13
A15
VCCQ
VSS
DQ7
A18
A17
A19
WP#
DQ1
DQ9
VCCQ
VPP
RST#
WE#
DQ12
DQ2
DQ10
DQ3
VSS
A20
WAIT#
DQ6
DQ13
DQ5
A4
A3
A2
A1
A0
OE#
VSSQ
A6
A5
A7
CE#
DQ0
DQ8
A8
A9
A10
A14
DQ15
DQ14
VSSQ
VCC
CLK
ADV#
A16
DQ4
DQ11
VCC
NOTE: See page 7 for Ball Description Table.
See page 43 for mechanical drawing.
OPTIONS
MARKING
• Timing
70ns access
-70
80ns access
-80
• Frequency
54 MHz
52
40 MHz
4
No burst operation
None
• Boot Block Configuration
Top
T
Bottom
B
• Package
58-ball FBGA (8 x 7 ball grid)
FH
• Operating Temperature Range
Extended (-40ºC to +85ºC)
ET
Part Number Example:
MT28F322D20FH-804 BET


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