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DSK10C-ET1 Datasheet(PDF) 1 Page - ON Semiconductor |
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DSK10C-ET1 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 2 page /53098 HA(KT)/92995GI(KOTO)/D268TA,TS RC No. A2855-1/2 22414HK TC-00000832/82207TIIM/33103TSIM/91001GIIM http://onsemi.com Semiconductor Components Industries, LLC, 2014 February, 2014 DSK10B,DSK10C, DSK10E 1.0A Power Rectifier Features • Designed for 5mm-pitch automatic insertion • Small plastic molded structure (3mm body) • Peak reverse voltage : 100 to 400V • Average output current : 1.0A Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions DSK10B DSK10C DSK10E Unit Peak Reverse Voltage VRM 100 200 400 V Average Recitifiedd Current IO 1.0 A Surge Forward Current IFSM 50Hz sine wave, 1cycle 45 A Junction Temperature Tj 150 °C Storage Temperature Tstg --40 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Value Unit min typ max Forward Voltage VF IF=1.0A 1.1 V Reverse Current IR VR:At each VRM 10 mA Ordering number : EN2855E Package Dimensions unit:mm(typ.) Ordering Information Device Shipping memo DSK10B 500 Unit/Bag Pb-Free DSK10B-AT1 3,000 Unit/Box DSK10B-BT 3,000 Unit/Box DSK10C 500 Unit/Bag DSK10C-AT1 3,000 Unit/Box DSK10C-BT 3,000 Unit/Box DSK10C-ET1 3,000 Unit/Box DSK10E 500 Unit/Bag DSK10E-AT1 3,000 Unit/Box DSK10E-BT 3,000 Unit/Box DSK10E-ET1 3,000 Unit/Box Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1 2 cathode mark 1 : Cathode 2 : Anode 0.6 φ 20.0 20.0 3.0 |
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