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MT28F322D20FH-704BET Datasheet(PDF) 10 Page - Micron Technology

Part # MT28F322D20FH-704BET
Description  FLASH MEMORY
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Manufacturer  MICRON [Micron Technology]
Direct Link  http://www.micron.com
Logo MICRON - Micron Technology

MT28F322D20FH-704BET Datasheet(HTML) 10 Page - Micron Technology

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10
2 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F322D20FH_4.p65 – Rev. 4, Pub. 7/02
©2002, Micron Technology, Inc.
2 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
Table 4
Command Definitions
FIRST BUS CYCLE
SECOND BUS CYCLE
COMMAND
OPERATION ADDRESS1
DATA
OPERATION ADDRESS1
DATA1
READ ARRAY
WRITE
WA
FFh
READ PROTECTION CONFIGURATION REGISTER
WRITE
IA
90h
READ
IA
ID
READ STATUS REGISTER
WRITE
BA
70h
READ
X
SRD
CLEAR STATUS REGISTER
WRITE
BA
50h
READ QUERY
WRITE
QA
98h
READ
QA
QD
BLOCK ERASE SETUP
WRITE
BA
20h
WRITE
BA
D0h
PROGRAM SETUP/ALTERNATE PROGRAM SETUP
WRITE
WA
40h/10h
WRITE
WA
WD
PROGRAM/ERASE SUSPEND
WRITE
BA
B0h
PROGRAM/ERASE RESUME – ERASE CONFIRM
WRITE
BA
D0h
LOCK BLOCK
WRITE
BA
60h
WRITE
BA
01h
UNLOCK BLOCK
WRITE
BA
60h
WRITE
BA
D0h
LOCK DOWN BLOCK
WRITE
BA
60h
WRITE
BA
2Fh
PROTECTION REGISTER PROGRAM
WRITE
PA
C0h
WRITE
PA
PD
PROTECTION REGISTER LOCK
WRITE
LPA
C0h
WRITE
LPA
FFFDh
SET READ CONFIGURATION REGISTER
WRITE
RCD
60h
WRITE
RCD
03h
are set to 00h internally, so only the low-order I/Os
(DQ0–DQ7) need to be interpreted. Address lines select
the status register pertinent to the selected memory
partition.
Register data is updated and latched on the falling
edge of ADV# or rising (falling) CLK when ADV# is LOW
during synchronous burst mode or on the falling edge of
OE# or CE#, whichever occurs last. Latching the data
prevents errors from occurring if the register input
changes during a status register monitoring.
The status register provides the internal state of the
WSM to the external microprocessor. During periods
when the WSM is active, the status register can be polled
to determine the WSM status. Table 7 defines the status
register bits.
After monitoring the status register during a PRO-
GRAM/ERASE operation, the data appearing on
DQ0–DQ7 remains as status register data until a new
command is issued to the CSM. To return the device to
other modes of operation, a new command must be
issued to the CSM.
COMMAND STATE MACHINE
OPERATIONS
The CSM decodes instructions for read array, read
protection configuration register, read query, read status
register, clear status register, program, erase, erase sus-
pend, erase resume, program suspend, program resume,
lock block, unlock block and lock down block, chip pro-
tection program, and set read configuration register. The
8-bit command code is input to the device on DQ0–DQ7
(see Table 3 for CSM codes and Table 4 for command
definitions). During a PROGRAM or ERASE cycle, the
CSM informs the WSM that a PROGRAM or ERASE cycle
has been requested.
During a PROGRAM cycle, the WSM controls the pro-
gram sequences and the CSM responds to a PROGRAM
SUSPEND command only.
NOTE: 1. BA: Address within the block
IA:
Identification code address
ID:
Identification code data
LPA: Lock protection register address
PA:
Protection register address
PD:
Data to be written at the location PA
QA: Query code address
QD: Query code data
RCD: Data to be written in the read configuration register
SRD: Data read from the status register
WA: Word address of memory location to be written, or read
WD: Data to be written at the location WA
X:
“Don’t Care”


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