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MT49H8M32FM Datasheet(PDF) 2 Page - Micron Technology |
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MT49H8M32FM Datasheet(HTML) 2 Page - Micron Technology |
2 / 43 page 2 256: x16, x32 RLDRAM Micron Technology, Inc., reserves the right to change products or specifications without notice. MT49H8M32_3.p65 – Rev. 3, Pub. 6/02 ©2002, Micron Technology, Inc. ADVANCE 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM NOTE: 1. When the BL4 setting is used, A18 is a “Don’t Care.” FUNCTIONAL BLOCK DIAGRAM 8 Meg x 32 A0–A18, B0, B1, B2 Column Address Buffer Column Address Counter Refresh Counter Row Decoder Memory Array Bank 1 Row Address Buffer Row Decoder Memory Array Bank 0 Row Decoder Memory Array Bank 2 Row Decoder Memory Array Bank 3 Row Decoder Memory Array Bank 5 Row Decoder Memory Array Bank 4 Row Decoder Memory Array Bank 6 Row Decoder Memory Array Bank 7 Data Valid DVLD Data Read Strobe DQS[3:0], DQS#[3:0] Input Buffers Output Buffers Control Logic and Timing Generator DQ0–DQ31 POWER-DOWN Because the RLDRAM uses multiple power supply voltage, the following sequence is required for power- down. • Take all input signals to be VSS or High-Z It is recommended to place Schottky diodes on the board between the 2.5V and 1.8V power supplies. |
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