2

4 Meg x 16 EDO DRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

D29_C.p65 – Rev. 2/01

©2001, Micron Technology, Inc.

4 MEG x 16

EDO DRAM

A0-

A11

RAS#

12

12

10

REFRESH

CONTROLLER

NO. 1 CLOCK

GENERATOR

12

10

COLUMN-

ADDRESS

BUFFER(10)

ROW-

ADDRESS

BUFFERS (12)

4,096

1,024

COLUMN

DECODER

16

REFRESH

COUNTER

4,096 x 1,024 x 16

MEMORY

ARRAY

1,024 x 16

4,096 x 16

NO. 2 CLOCK

GENERATOR

WE#

OE#

DQ0-

DQ15

16

16

DATA-OUT

BUFFER

CASL#

CAS#

CASH#

DATA-IN BUFFER

16

SENSE AMPLIFIERS

I/O GATING

FUNCTIONAL BLOCK DIAGRAM

MT4LC4M16R6 (12 row addresses)

A0-

A12

RAS#

13

13

9

NO. 2 CLOCK

GENERATOR

REFRESH

CONTROLLER

NO. 1 CLOCK

GENERATOR

Vcc

Vss

13

WE#

9

COLUMN-

ADDRESS

BUFFER(9)

ROW-

ADDRESS

BUFFERS (13)

8192

512

COLUMN

DECODER

OE#

DQ0-

DQ15

16

16

16

16

REFRESH

COUNTER

SENSE AMPLIFIERS

I/O GATING

DATA-OUT

BUFFER

8192 x 512 x 16

MEMORY

ARRAY

512 x 16

8192 x 16

CASL#

CAS#

CASH#

DATA-IN BUFFER

FUNCTIONAL BLOCK DIAGRAM

MT4LC4M16N3 (13 row addresses)