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MT4LC16M4G3TG-5 Datasheet(PDF) 8 Page - Micron Technology |
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MT4LC16M4G3TG-5 Datasheet(HTML) 8 Page - Micron Technology |
8 / 22 page 8 16 Meg x 4 EDO DRAM Micron Technology, Inc., reserves the right to change products or specifications without notice. D22_2.p65 – Rev. 5/00 ©2000, Micron Technology, Inc. 16 MEG x 4 EDO DRAM AC ELECTRICAL CHARACTERISTICS (Notes: 5, 6, 7, 8, 9, 10, 11, 12) (VCC = +3.3V ±0.3V) AC CHARACTERISTICS -5 -6 PARAMETER SYMBOL MIN MAX MIN MAX UNITS NOTES OE# setup prior to RAS# during tORD 0 0 ns HIDDEN REFRESH cycle EDO-PAGE-MODE READ or WRITE cycle time tPC 20 25 ns EDO-PAGE-MODE READ-WRITE cycle time tPRWC 47 56 ns Access time from RAS# tRAC 50 60 ns 23 RAS# to column-address delay time tRAD 9 12 ns 15 Row-address hold time tRAH 9 10 ns RAS# pulse width tRAS 50 10,000 60 10,000 ns RAS# pulse width (EDO PAGE MODE) tRASP 50 125,000 60 125,000 ns RAS# pulse width during Self Refresh tRASS 100 100 µs Random READ or WRITE cycle time tRC 84 104 ns RAS# to CAS# delay time tRCD 11 14 ns 14 READ command hold time (referenced to CAS#) tRCH 0 0 ns 16 READ command setup time tRCS 0 0 ns Refresh period tREF 64 64 ms 22 Refresh period (4,096 cycles) “S” version tREF 128 128 ms 4 RAS# precharge time tRP 30 40 ns RAS# to CAS# precharge time tRPC 5 5 ns RAS# precharge time exiting Self Refresh tRPS 90 105 ns READ command hold time (referenced to RAS#) tRRH 0 0 ns 16 RAS# hold time tRSH 13 15 ns READ-WRITE cycle time tRWC 116 140 ns RAS# to WE# delay time tRWD 67 79 ns 18 WRITE command to RAS# lead time tRWL 13 15 ns Transition time (rise or fall) tT2 50 2 50 ns WRITE command hold time tWCH 8 10 ns WRITE command hold time (referenced to RAS#) tWCR 38 45 ns WE# command setup time tWCS 0 0 ns 18 WE# to outputs in High-Z tWHZ 0 12 0 15 ns WRITE command pulse width tWP 5 5 ns WE# pulse width to disable outputs tWPZ 10 10 ns WE# hold time (CBR Refresh) tWRH 8 10 ns 4, 23 WE# setup time (CBR Refresh) tWRP 8 10 ns 4, 23 |
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