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MT4LC4M4B1TG-6 Datasheet(PDF) 8 Page - Micron Technology |
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MT4LC4M4B1TG-6 Datasheet(HTML) 8 Page - Micron Technology |
8 / 20 page 8 4 Meg x 4 FPM DRAM Micron Technology, Inc., reserves the right to change products or specifications without notice. D49_5V.p65 – Rev. 5/00 ©2000, Micron Technology, Inc. 4 MEG x 4 FPM DRAM NOTES 1. All voltages referenced to VSS. 2. This parameter is sampled. VCC = +3.3V or 5.0V; f = 1 MHz. 3. ICC is dependent on output loading and cycle rates. Specified values are obtained with minimum cycle time and the outputs open. 4. Enables on-chip refresh and address counters. 5. The minimum specifications are used only to indicate cycle time at which proper operation over the full temperature range is ensured. 6. An initial pause of 100µs is required after power- up, followed by eight RAS# refresh cycles (RAS#- ONLY or CBR with WE# HIGH), before proper device operation is ensured. The eight RAS# cycle wake-ups should be repeated any time the tREF refresh requirement is exceeded. 7. AC characteristics assume tT = 5ns. 8. VIH (MIN) and VIL (MAX) are reference levels for measuring timing of input signals. Transition times are measured between VIH and VIL (or between VIL and VIH). 9. In addition to meeting the transition rate specification, all input signals must transit between VIH and VIL (or between VIL and VIH) in a monotonic manner. 10. If CAS# = VIH, data output is High-Z. 11. If CAS# = VIL, data output may contain data from the last valid READ cycle. 12. Measured with a load equivalent to two TTL gates, 100pF and VOL = 0.8V and VOH = 2V. 13. If CAS# is LOW at the falling edge of RAS#, Q will be maintained from the previous cycle. To initiate a new cycle and clear the data-out buffer, CAS# must be pulsed HIGH for tCP. 14. The tRCD (MAX) limit is no longer specified. tRCD (MAX) was specified as a reference point only. If tRCD was greater than the specified tRCD (MAX) limit, then access time was con- trolled exclusively by tCAC (tRAC [MIN] no longer applied). With or without the tRCD limit, tAA and tCAC must always be met. 15. The tRAD (MAX) limit is no longer specified. tRAD (MAX) was specified as a reference point only. If tRAD was greater than the specified tRAD (MAX) limit, then access time was con- trolled exclusively by tAA (tRAC and tCAC no longer applied). With or without the tRAD (MAX) limit, tAA, tRAC, and tCAC must always be met. 16. Either tRCH or tRRH must be satisfied for a READ cycle. 17. tOFF (MAX) defines the time at which the output achieves the open circuit condition and is not referenced to VOH or VOL. 18. tWCS, tRWD, tAWD, and tCWD are not restrictive operating parameters. tWCS applies to EARLY WRITE cycles. tRWD, tAWD, and tCWD apply to READ-MODIFY-WRITE cycles. If tWCS tWCS (MIN), the cycle is an EARLY WRITE cycle and the data output will remain an open circuit throughout the entire cycle. If tRWD ³ tRWD (MIN), tAWD ³ tAWD (MIN), and tCWD ³ tCWD (MIN), the cycle is a READ-MODIFY- WRITE and the data output will contain data read from the selected cell. If neither of the above conditions is met, the state of data-out is indeterminate. OE# held HIGH and WE# taken LOW after CAS# goes LOW result in a LATE WRITE (OE#-controlled) cycle. tWCS, tRWD, tCWD, and tAWD are not applicable in a LATE WRITE cycle. 19. These parameters are referenced to CAS# leading edge in EARLY WRITE cycles and WE# leading edge in LATE WRITE or READ-MODIFY-WRITE cycles. 20. If OE# is tied permanently LOW, LATE WRITE, or READ-MODIFY-WRITE operations are not permissible and should not be attempted. 21. A HIDDEN REFRESH may also be performed after a WRITE cycle. In this case, WE# = LOW and OE# = HIGH. 22. The 3ns minimum is a parameter guaranteed by design. 23. Column address changed once each cycle. 24. VIH overshoot: VIH (MAX) = VCC + 2V for a pulse width £ 10ns, and the pulse width cannot be greater than one third of the cycle rate. VIL undershoot: VIL (MIN) = -2V for a pulse width £ 10ns, and the pu lse width cannot be greater than one third of the cycle rate. |
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