6

8 Meg x 8 FPM DRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

D19_2.p65 – Rev. 5/00

©2000, Micron Technology, Inc.

8 MEG x 8

FPM DRAM

CAPACITANCE

(Note: 2)

PARAMETER

SYMBOL

MAX

UNITS

Input Capacitance: Address pins

5pF

Input Capacitance: RAS#, CAS#, WE#, OE#

7pF

Input/Output Capacitance: DQ

7pF

AC ELECTRICAL CHARACTERISTICS

AC CHARACTERISTICS

-5

-6

PARAMETER

SYMBOL

MIN

MAX

MIN

MAX

UNITS

NOTES

Access time from column address

25

30

ns

Column-address hold time (referenced to RAS#)

40

45

ns

Column-address setup time

0

0

ns

Row-address setup time

0

0

ns

Column address to WE# delay time

48

55

ns

18

Access time from CAS#

13

15

ns

Column-address hold time

8

10

ns

CAS# pulse width

13

10,000

15

10,000

ns

CAS# LOW to “Don’t Care” during Self Refresh

15

15

ns

CAS# hold time (CBR Refresh)

15

15

ns

4

CAS# to output in Low-Z

3

3

ns

CAS# precharge time (FAST PAGE MODE)

8

10

ns

13

Access time from CAS# precharge

30

35

ns

CAS# to RAS# precharge time

5

5

ns

CAS# hold time

50

60

ns

CAS# setup time (CBR Refresh)

5

5

ns

4

CAS# to WE# delay time

36

40

ns

18

WRITE command to CAS# lead time

13

15

ns

Data-in hold time

8

10

ns

19

Data-in setup time

0

0

ns

19

Output disable

3

13

3

15

ns

23, 24

Output enable time

13

15

ns

20

OE# hold time from WE# during

13

15

ns

24

READ-MODIFY-WRITE cycle

Output buffer turn-off delay

3

13

3

15

ns

17, 23

OE# setup prior to RAS# during

0

0

ns

HIDDEN REFRESH cycle

FAST-PAGE-MODE READ or WRITE cycle time

30

35

ns

FAST-PAGE-MODE READ-WRITE cycle time

76

85

ns

Access time from RAS#

50

60

ns