4 Meg x 4 EDO DRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

D47.pm5 – Rev. 3/97

©1997, Micron Technology, Inc.

6

4 MEG x 4

EDO DRAM

TECHNOLOGY, INC.

ABSOLUTE MAXIMUM RATINGS*

3.3V ................................................................ -1V to +4.6V

5V ...................................................................... -1V to +7V

3.3V ................................................................ -1V to +5.5V

5V ...................................................................... -1V to +7V

Storage Temperature (plastic) .................... -55

°C to +150°C

Power Dissipation ............................................................. 1W

Short Circuit Output Current ..................................... 50mA

*Stresses greater than those listed under “Absolute Maxi-

mum Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of the

device at these or any other conditions above those indi-

cated in the operational sections of this specification is not

implied. Exposure to absolute maximum rating conditions

for extended periods may affect reliability.

DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS

(Notes: 1)

3.3V

5V

PARAMETER/CONDITION

SYMBOL

MIN

MAX

MIN

MAX

UNITS

NOTES

Supply Voltage

3.0

3.6

4.5

5.5

V

Input High Voltage:

Valid Logic 1; all inputs, I/Os and any NC

2.0

5.5

2.4

V

Input Low Voltage:

Valid Logic 0; all inputs, I/Os and any NC

-1.0

0.8

-0.5

0.8

V

Input Leakage Current:

-2

2

-2

2

µA

4

all other pins not under test = 0V

Output High Voltage:

2.4

-

2.4

-

V

Output Low Voltage:

-

0.4

-

0.4

V

Output Leakage Current:

-5

5

-5

5

µA

DQ is disabled and in High-Z state