IRLL110, SiHLL110

www.vishay.com

Vishay Siliconix

S15-1195-Rev. F, 25-May-15

1

Document Number: 91320

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Power MOSFET

Marking code: LB

FEATURES

• Surface mount

• Available in tape and reel

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Logic-level gate drive

• Fast switching

• Material categorization: for definitions of compliance

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.



The SOT-223 package is designed for surface-mounting

using vapor phase, infrared, or wave soldering techniques.

Its unique package design allows for easy automatic

pick-and-place as with other SOT or SOIC packages but

has the added advantage of improved thermal performance

due to an enlarged tab for heatsinking. Power dissipation of

greater than 1.25 W is possible in a typical surface mount

application.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

PRODUCT SUMMARY

100

0.54

6.1

2.6

3.3

Configuration

Single

N-Channel MOSFET

G

D

S

SOT-223

G

D

S

D

Available

ORDERING INFORMATION

Package

SOT-223

SOT-223

Tube

Tape and Reel

Lead (Pb)-free and Halogen-free

-

SiHLL110TR-GE3

Lead (Pb)-free

IRLL110PbF

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

100

V

Gate-Source Voltage

± 10

Continuous Drain Current

1.5

A

0.93

12

Linear Derating Factor

0.025

W/°C

0.017

50

mJ

1.5

A

0.31

mJ

Maximum Power Dissipation

3.1

W

2.0

dV/dt

5.5

V/ns

Operating Junction and Storage Temperature Range

-55 to +150

°C

for 10 s

300