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MT4LC8M8E1TG-6 Datasheet(PDF) 4 Page - Micron Technology |
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MT4LC8M8E1TG-6 Datasheet(HTML) 4 Page - Micron Technology |
4 / 20 page 4 8 Meg x 8 FPM DRAM Micron Technology, Inc., reserves the right to change products or specifications without notice. D19_2.p65 – Rev. 5/00 ©2000, Micron Technology, Inc. 8 MEG x 8 FPM DRAM ABSOLUTE MAXIMUM RATINGS* Voltage on VCC Relative to VSS ................ -1V to +4.6V Voltage on NC, Inputs or I/O Pins Relative to VSS ....................................... -1V to +4.6V Operating Temperature, TA (ambient) ... 0°C to +70°C Storage Temperature (plastic) ............ -55°C to +150°C Power Dissipation ................................................... 1W *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS (Notes: 1, 5, 6) (VCC = +3.3V ±0.3V) PARAMETER/CONDITION SYMBOL MIN MAX UNITS NOTES SUPPLY VOLTAGE VCC 3 3.6 V INPUT HIGH VOLTAGE: Valid Logic 1; All inputs, I/Os and any NC VIH 2VCC + 0.3 V 26 INPUT LOW VOLTAGE: Valid Logic 0; All inputs, I/Os and any NC VIL -0.3 0.8 V 26 INPUT LEAKAGE CURRENT: Any input at VIN (0V £ VIN £ VCC + 0.3V); II -2 2 µA All other pins not under test = 0V OUTPUT HIGH VOLTAGE: IOUT = -2mA VOH 2.4 – V OUTPUT LOW VOLTAGE: IOUT = 2mA VOL – 0.4 V OUTPUT LEAKAGE CURRENT: Any output at VOUT (0V £ VOUT £ VCC + 0.3V); IOZ -5 5 µA DQ is disabled and in High-Z state |
Similar Part No. - MT4LC8M8E1TG-6 |
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Similar Description - MT4LC8M8E1TG-6 |
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