KAF-1001 Image Sensor

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Revision 1.1 PS-0033 Pg 10

Imaging Performance

All values derived using nominal operating conditions with the recommended timing. Correlated doubling sampling of

the output is assumed and recommended. Many units are expressed in electrons: to convert to voltage, multiply by

the amplifier sensitivity.

Electro-Optical

Description

Symbol

Min

Nom

Max

Units

Notes

Verification Plan

Optical Fill Factor

F F

100

%

Photoresponse Non-uniformity

PRNU

5

% rms

Full Array

die

10

Quantum Efficiency (450, 550, 650 nm)

QE

design

11

CCD Parameters Common to Both Outputs

Description

Symbol

Min

Nom

Max

Units

Notes

Verification Plan

Sat. Signal - Vccd Register

-

sat

450

500

ke

-

2

design

11

Dark Current

Jd

15.3

550

30

1080

pA/cm

2

e

25 °C

(mean of all pixels)

die

10

Dark Current Doubling Temp

DCDR

5

6

7

°C

design

11

Dark Signal Non-uniformity

DSNU

1080

e

4

die

10

Charge Transfer Efficiency

CTE

.99997

5

die

10

V-H CCD Transfer Time

32

µs

6,7

design

11

Blooming Suppression

Bs

none

CCD Parameters Specific to High Output Amplifier

Description

Symbol

Min

Nom

Max

Units

Notes

Verification Plan

Output Sensitivity

Vout/Ne

-

9

11

µV/electron

design

11

Sat. Signal

-

sat

180

200

240

ke

-

1

design

11

Total Sensor Noise

-

total

13

20

e

8

design

11

Horizontal CCD Frequency:

2

5

MHz

6

design

11

Dynamic Range:

DR

79

83

dB

9

design

11

CCD Parameters Specific to Low Gain (High Dynamic Range) Output Amplifier

Description

Symbol

Min

Nom

Max

Units

Notes

Verification Plan

Output Sensitivity

Vout/Ne

-

1.7

2

µV/electron

die

10

Sat. Signal

-

sat

1400

1500

1800

ke

-

3

design

11

Total Sensor Noise

-

total

22

30

e

8

die

10

Horizontal CCD Frequency:

0.5

2

MHz

6

design

11

Dynamic Range :

DR

93

97

dB

9

design

11