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KAF-1603-ABA-CD-B2 Datasheet(PDF) 4 Page - ON Semiconductor |
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KAF-1603-ABA-CD-B2 Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 21 page KAF-1603 Image Sensor www.truesenseimaging.com Revision 1.1 PS-0036 Pg 4 Summary Specification KAF-1603 Image Sensor DESCRIPTION The KAF-1603 Image Sensor is a high performance monochrome area CCD (charge-coupled device) image sensor with 1536 H x 1024 V photoactive pixels designed for a wide range of image sensing applications. The sensor incorporates true two-phase CCD technology, simplifying the support circuits required to drive the sensor as well as reducing dark current without compromising charge capacity. The sensor also utilizes the TRUESENSE Transparent Gate Electrode to improve sensitivity compared to the use of a standard front side illuminated polysilicon electrode. Optional microlenses focus the majority of the light through the transparent gate, increasing the optical response further. FEATURES True Two Phase Full Frame Architecture TRUESENSE Transparent Gate Electrode for high sensitivity APPLICATION Scientific Imaging Parameter Typical Value Architecture Full Frame CCD Total Number of Pixels 1552 (H) x 1032 (V) Number of Active Pixels 1536 (H) x 1024 (V) = approx. 1.6 M Pixel Size 9.0 µm (H) x 9.0 µm (V) Active Image Size 13.8 mm (H) x 9.2 mm (V) Die Size 15.5 mm (H) x 10 mm (V) Aspect Ratio 3:2 Saturation Signal 100,000 electrons Output Sensitivity 10 µV/e - Quantum Efficiency (with microlens) Peak: 77% 400 nm: 45% Quantum Efficiency (no microlens) Peak: 65% 400 nm: 30% Read Noise 15 electrons Dark Current (T = 25 °C) <10 pA/cm 2 Dark Current Doubling Temperature 6.3 °C Dynamic Range 74 dB Charge Transfer Efficiency >0.99999 Blooming Suppression None Maximum Data Rate 10 MHz Package CERDIP Package (sidebrazed) Cover Glass Clear or AR coated, 2sides Parameters above are specified at 25 °C, unless otherwise noted. |
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