MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918

www.micropac.com

E-MAIL: optosales@micropac.com

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4N47A

4N49A

Mii

OPTOELECTRONIC PRODUCTS

DIVISION

Features:

•

High Reliability

•

Base lead provided for conventional transistor

biasing

•

Rugged package

•

High gain, high voltage transistor

•

+1kV electrical isolation

Applications:

•

Eliminate ground loops

•

Level shifting

•

Line receiver

•

Switching power supplies

•

Motor control

DESCRIPTION

Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically

sealed TO-5 metal can. The 4N47A, 4N48A and 4N49A’s can be tested to customer specifications, as well as to MIL-PRF-

19500 JAN, JANTX, JANTXV and JANS quality levels.

*ABSOLUTE MAXIMUM RATINGS

Input to Output Voltage.............................................................................................................................................................1kV

Emitter-Collector Voltage............................................................................................................................................................7V

Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) ............................40V

Collector-Base Voltage .............................................................................................................................................................45V

Reverse Input Voltage ...............................................................................................................................................................2V

Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) ......................................40mA

Continuous Collector Current ................................................................................................................................................50mA

Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ..................................300mW

Storage Temperature........................................................................................................................................... -65°C to +125°C

Operating Free-Air Temperature Range ............................................................................................................. -55°C to +125°C

Lead Solder Temperature (1/16” (1.6mm) from case for 10 seconds) ................................................................................ 240°C

Notes:

1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C.

2. Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C.

*JEDEC registered data

Package Dimensions

Schematic Diagram

NO T E : A L L L I N E A R DI M E NS I O NS A R E I N I NCHE S ( M I L L I M E T E RS )

6 LE A D S

0 . 0 1 6 Ø [0 .4 1 ]

0 . 0 19Ø [ 0 . 4 8]

1

2

3

5

6

7

0 . 3 35 [ 8 . 51]

0 . 3 05 [ 7 . 75]

MI N .

0 . 0 40 [ 1 . 02]

M AX.

0. 50 0 [ 1 2. 70 ]

0 . 1 55 [ 3 . 94]

0 . 1 85 [ 4 . 70]

0 . 0 45 [ 1 . 14]

0 . 0 29 [ 0 . 73]

0. 03 4 [ 0 . 8 64 ]

0. 02 8 [ 0 . 7 11 ]

45 °

3

5

E

B

K

7

2

1

C

A

0 . 0 2 2 Ø [5 .0 8 ]

NOTE: COLLECTOR IS ISOLATED FROM CASE