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JAN4N48A Datasheet(PDF) 1 Page - Micropac Industries |
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JAN4N48A Datasheet(HTML) 1 Page - Micropac Industries |
1 / 2 page MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: optosales@micropac.com 3 - 14 4N47A 4N48A JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS 4N49A Mii OPTOELECTRONIC PRODUCTS DIVISION Features: • High Reliability • Base lead provided for conventional transistor biasing • Rugged package • High gain, high voltage transistor • +1kV electrical isolation Applications: • Eliminate ground loops • Level shifting • Line receiver • Switching power supplies • Motor control DESCRIPTION Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed TO-5 metal can. The 4N47A, 4N48A and 4N49A’s can be tested to customer specifications, as well as to MIL-PRF- 19500 JAN, JANTX, JANTXV and JANS quality levels. *ABSOLUTE MAXIMUM RATINGS Input to Output Voltage.............................................................................................................................................................1kV Emitter-Collector Voltage............................................................................................................................................................7V Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) ............................40V Collector-Base Voltage .............................................................................................................................................................45V Reverse Input Voltage ...............................................................................................................................................................2V Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) ......................................40mA Peak Forward Input Current (Value applies for tw < 1µs, PRR < 300 pps) ...............................................................................1A Continuous Collector Current ................................................................................................................................................50mA Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ..................................300mW Storage Temperature........................................................................................................................................... -65°C to +125°C Operating Free-Air Temperature Range ............................................................................................................. -55°C to +125°C Lead Solder Temperature (1/16” (1.6mm) from case for 10 seconds) ................................................................................ 240°C Notes: 1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C. 2. Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C. *JEDEC registered data Package Dimensions Schematic Diagram NO T E : A L L L I N E A R DI M E NS I O NS A R E I N I NCHE S ( M I L L I M E T E RS ) 6 LE A D S 0 . 0 1 6 Ø [0 .4 1 ] 0 . 0 19Ø [ 0 . 4 8] 1 2 3 5 6 7 0 . 3 35 [ 8 . 51] 0 . 3 05 [ 7 . 75] MI N . 0 . 0 40 [ 1 . 02] M AX. 0. 50 0 [ 1 2. 70 ] 0 . 1 55 [ 3 . 94] 0 . 1 85 [ 4 . 70] 0 . 0 45 [ 1 . 14] 0 . 0 29 [ 0 . 73] 0. 03 4 [ 0 . 8 64 ] 0. 02 8 [ 0 . 7 11 ] 45 ° 3 5 E B K 7 2 1 C A 0 . 0 2 2 Ø [5 .0 8 ] NOTE: COLLECTOR IS ISOLATED FROM CASE |
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