MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918

www.micropac.com

E-MAIL: optosales@microropac.com

3 - 10

4N22A

4N24A

Mii

OPTOELECTRONIC PRODUCTS

DIVISION

Features:

•

Collector is electrically isolated from the case.

•

Overall current gain...1.5 typical (4N24A)

•

Base lead provided for conventional transistor

biasing

•

Rugged package

•

High gain, high voltage transistor

•

+1kV electrical isolation

Applications:

•

Eliminate ground loops

•

Level shifting

•

Line receiver

•

Switching power supplies

•

Motor control

DESCRIPTION

Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically

sealed metal case. The 4N22A, 4N23A and 4N24A can be tested to customer specifications, as well as to MIL-PRF-19500

JAN, JANS, JANTX, and JANTXV quality levels.

*ABSOLUTE MAXIMUM RATINGS

Emitter-Collector Voltage..............................................................................................................................................................4V

Collector-Emitter Voltage............................................................................................................................................................35V

Collector-Base Voltage ...............................................................................................................................................................35V

Reverse Input Voltage .................................................................................................................................................................2V

Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) ....................................... 40mA

Continuous Collector Current ................................................................................................................................................. 50mA

Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ................................... 300mW

Storage Temperature............................................................................................................................................. -65°C to +125°C

Operating Free-Air Temperature Range ............................................................................................................... -55°C to +125°C

Lead Solder Temperature (1/16” (1.6mm) from case for 10 seconds) ..................................................................................240°C

Notes:

1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C.

2. Derate linearly to 125°C free-air temperature at the rate of 5 mW/°C.

* JEDEC registered data

Package Dimensions

Schematic Diagram

NOTE: ALL LINEAR DIMENSIONS ARE IN INCHES (MILLIMETERS)

6 LEADS

0.016Ø [0.41]

0.019Ø [0.48]

1

2

3

5

6

7

0.335 [8.51]

0.305 [7.75]

MIN.

0.040 [1.02]

MAX.

0.500 [12.70]

0.155 [3.94]

0.185 [4.70]

0.045 [1.14]

0.029 [0.73]

0.034 [0.864]

0.028 [0.711]

45°

TO5

0.022Ø [5.08]

7 K

A

5

2

B

E

1

3

C