MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918

www.micropac.com

E-MAIL: optosales@micropac.com

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Single Channel Optocoupler

66116

Electrically Similar to 4N47-4N49

Coaxial or Bulkhead Mount packages

Mii

OPTOELECTRONIC PRODUCTS

DIVISION

Features:

•

High reliability

•

Base lead provided for conventional transistor

biasing

•

Very high gain, high voltage transistor

•

Hermetically sealed for reliability and stability

•

Stability over wide temperature range

•

High voltage electrical isolation

Applications:

•

Line Receivers

•

Switchmode Power Supplies

•

Signal ground isolation

•

Process Control input/output isolation

DESCRIPTION

Very high gain optocoupler utilizing GaAIAs infrared LED optically coupled to an N-P-N silicon phototransistor packaged in a

hermetically sealed metal case. These devices can be tested to customer specifications, as well as to MIL-PRF-38534 H&K

quality levels.

*ABSOLUTE MAXIMUM RATINGS

Collector-Base Voltage ...........................................................................................................................................................45V

Collector-Emitter Voltage (See Note 1) ..................................................................................................................................40V

Emitter-Base Voltage................................................................................................................................................................ 7V

Input Diode Reverse Voltage.................................................................................................................................................... 2V

Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 2) ....................................40mA

Continuous Collector Current ..............................................................................................................................................50mA

Peak Diode Current (See Note 3)............................................................................................................................................. 1A

Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 4) ................................300mW

Operating Free-Air Temperature Range ............................................................................................................-55°C to +125°C

Storage Temperature..........................................................................................................................................-65°C to +125°C

Lead Temperature (1/16” (1.6mm) from case for 10 seconds).......................................................................................... 240°C

* JEDEC registered data

Package Dimensions

Schematic Diagram

Case Lead

Emitter

Base

ANODE

CATHODE

Collector

Case Lead

E

B

K

C

A

Notes:

1. This value applies with the emitter-base diode open-circuited and the input-diode current equal to zero.

2. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C.

4. Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C.