NTLUS3C18PZ datasheet(2/6 Pages) ONSEMI

Part #	NTLUS3C18PZ

Description	Power MOSFET

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NTLUS3C18PZ

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THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Unit

Junction-to-Ambient – Steady State (Note 3)

RθJA

72

°C/W

Junction-to-Ambient – t

≤ 5 s (Note 3)

RθJA

32.6

Junction-to-Ambient – Steady State min Pad (Note 4)

RθJA

190.4

3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = −250 mA

−12

V

Drain-to-Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

ID = −250 mA, ref to 25°C

7.3

mV/

°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = −9.6 V

TJ = 25°C

−1.0

mA

Gate-to-Source Leakage Current

IGSS

VDS = 0 V, VGS = ±8 V

±10

mA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = −250 mA

−0.4

−1.0

V

Negative Threshold Temp. Coefficient

VGS(TH)/TJ

3.0

mV/

°C

Drain-to-Source On Resistance

RDS(on)

VGS = −4.5 V, ID = −7.0 A

20

24

m

W

VGS = −3.7 V, ID = −6.6 A

22

27

VGS = −3.3 V, ID = −5.7 A

24

30

VGS = −2.5 V, ID = −5.1 A

29

36

VGS = −1.8 V, ID = −2.0 A

44

70

Forward Transconductance

gFS

VDS = −5 V, ID = −7.0 A

21.8

S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1 MHz,

VDS = −6.0 V

1570

pF

Output Capacitance

COSS

200

Reverse Transfer Capacitance

CRSS

240

Total Gate Charge

QG(TOT)

VGS = −4.5 V, VDS = −6.0 V;

ID = −7.0 A

15.8

nC

Threshold Gate Charge

QG(TH)

0.7

Gate-to-Source Charge

QGS

1.9

Gate-to-Drain Charge

QGD

4.6

SWITCHING CHARACTERISTICS (Note 6)

Turn-On Delay Time

td(ON)

VGS = −4.5 V, VDD = −6 V,

ID = −7.0 A, RG = 1 W

8.5

ns

Rise Time

tr

52.5

Turn-Off Delay Time

td(OFF)

40

Fall Time

tf

59

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = −1.7 A

TJ = 25°C

0.71

1.0

V

TJ = 125°C

0.58

5. Pulse Test: pulse width

≤ 300 ms, duty cycle ≤ 2%.

6. Switching characteristics are independent of operating junction temperatures.

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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