NTLUS3C18PZTAG datasheet(4/6 Pages) ONSEMI

Part #	NTLUS3C18PZTAG

Description	Power MOSFET

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NTLUS3C18PZ

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4

TYPICAL CHARACTERISTICS

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

−VDS, DRAIN−TO−SOURCE (V)

QG, TOTAL GATE CHARGE (nC)

12

10

8

6

4

2

0

500

1000

1500

2000

2500

16

14

12

8

6

4

2

0

1

2

3

4

5

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)

−VSD, SOURCE−TO−DRAIN VOLTAGE (V)

100

10

1

10

100

1000

0.9

0.8

1.0

0.7

0.6

0.5

0.4

0.3

0.1

1

10

Figure 11. Threshold Voltage

Figure 12. Maximum Rated Forward Biased

Safe Operating Area

TJ, JUNCTION TEMPERATURE (°C)

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

125

100

75

50

25

0

−25

−50

0.15

0.25

0.35

0.45

0.55

0.75

0.85

0.95

100

10

1

0.1

0.01

0.1

1

10

100

CISS

COSS

CRSS

VGS = 0 V

TJ = 25°C

f = 1 MHz

10

18

0

4

8

12

16

18

14

10

6

2

VDS = −6 V

TJ = 25°C

ID = −10 A

QT

QGS

VGS

QGD

VGS = −4.5 V

VDD = −6 V

ID = −10 A

tf

tr

td(off)

td(on)

TJ = 125°C

TJ = 25°C

TJ = −55°C

ID = −250 mA

150

0.65

VGS = −8 V

Single Pulse

TC = 25°C

10

ms

100

ms

1 ms

10 ms

dc

RDS(on) Limit

Thermal Limit

Package Limit

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